electrical engineering Mcqs
2301. Negative feedback is employed in __________________?
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A. Rectifiers

B. Amplifiers

C. None of the above

D. Oscillators

2303. An ideal OP-AMP is an ideal___________?
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A. voltage controlled current source

B. Voltage controlled voltage source

C. Current controlled voltage source

D. Current controlled Current source

2305. A crystal diode utilises .. characteristic for rectification
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A. reverse

B. forward

C. none of the above

D. forward or reverse

2306. In a transistor ______________?
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A. IC = IE + IB

B. IE = IC + IB

C. IB = IC + IE

D. IE = IC IB

2307. The relation between and a is______________?
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A. = 1 / (1 a )

B. = a / (1 + a )

C. = (1 a ) / a

D. = a / (1 a )
2308. The values of h parameter of a transistor in CE arrangement are ____________ arrangement?
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A. None of the above

B. Different from that in CB

C. The same as for CC

D. The same as for CB

2309. Hybrid means_____________?
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A. None of the above

B. Unique

C. Mixed

D. Single

2310. In an electric room heat convector the method of heating used is______________?
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A. arc heating

B. dielectric heating

C. induction heating

D. resistance heating
2311. In an LC circuit, when the capacitor is maximum, the inductor energy is____________?
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A. Maximum

B. Half-way between maximum and minimum

C. Minimum

D. None of the above

2317. In a domestic cake baking oven the temperature is controlled by________________?
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A. series-parallel operation

B. voltage variation

C. auto-transformer

D. thermostat

2318. The input impedance of a transistor connected in___________arrangement is the highest?
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A. none of the above

B. common base

C. common emitter

D. common collector
2319. The value of for a transistor is generally____________?
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A. less than 1

B. between 20 and 500

C. above 500

D. 1

2320. One condition for oscillation is_____________?
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A. A phase shift around the feedback loop of 0o

B. A gain around the feedback loop of one-third

C. A phase shift around the feedback loop of 180o

D. A gain around the feedback loop of less than 1

2321. A crystal diode has______________?
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A. three pn junctions

B. one pn junction

C. none of the above

D. two pn junctions

2322. Due to which of the following reasons it is desirable to have short arc length ?
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A. All of the above

B. To have better stirring action

C. To increase the life of roof refractory

D. To achieve better heating

E. To reduce problem of oxidation

2325. When current feedback (negative) is applied to an amplifier, its input impedance _____________?
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A. Is increased

B. Remains the same

C. None of the above

D. Is decreased
2326. The emitter of a transistor is___________doped?
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A. lightly

B. heavily

C. none of the above

D. moderately

2329. A perfect black body is one that_____________?
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A. absorbs, reflects and transmits all incident radiations

B. transmits all incident radiations

C. absorbs all incident radiations

D. reflects all incident radiations

2333. In a npn transistor,_____________are the minority carriers?
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A. donor ions

B. holes

C. acceptor ions

D. free electrons

2335. In induction heating ___________ is abnormally high?
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A. voltage

B. frequency

C. phase angle

D. current

2336. In a resistance furnace the atmosphere is_____________?
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A. neutral

B. oxidizing

C. reducing

D. deoxidising

2338. Direct arc furnaces have which of the following power factors ?
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A. Low, leading

B. Unity

C. Any of the above

D. Low, lagging
2339. The power gain in a transistor connected in___________arrangement is the highest?
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A. common collector

B. common emitter

C. common base

D. none of the above

2340. Which of the following is an advantage of heating by electricity ?
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A. All of the above

B. Quicker operation

C. Higher efficiency

D. Absence of flue gases

2341. Which of the following will happen if the thickness of refractory wall of furnace is increased ?
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A. Heat loss through furnace wall will increase

B. Energy consumption will increase

C. Temperature inside the furnace will fall

D. Temperature on the outer surface of furnace walls will drop
2342. Mains a.c. power is converrted into d.c. power for_________________?
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A. none of the above

B. lighting purposes

C. using in electronic equipment

D. heaters

2343. The disadvantage of a half-wave rectifier is that the__________________?
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A. none of the above

B. output is difficult to filter

C. components are expensive

D. diodes must have a higher power rating

2345. If the doping level of a crystal diode is increased, the breakdown voltage__________________?
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A. is decreased

B. none of the above

C. remains the same

D. is increased

2346. Properly of low temperature co-eflficient of heating element is desired due to which of the following reasons ?
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A. To avoid initial rush of current

B. To avoid change in kW rating with temperature

C. Both (A) and (B)

D. Either (A) or (B)

2348. Most of the majority carriers from the emitter____________?
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A. recombine in the emitter

B. recombine in the base

C. pass through the base region to the collector

D. none of the above