transistors Mcqs
1. In a npn transistor,_____________are the minority carriers?
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A. acceptor ions

B. holes

C. free electrons

D. donor ions

2. The element that has the biggest size in a transistor is____________?
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A. emitter

B. base

C. collector

D. collector-base-junction

3. The voltage gain of a transistor connected in common collector arrangement is____________?
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A. more than 100

B. less than 1

C. equal to 1

D. more than 10

4. As the temperature of a transistor goes up, the base-emitter resistance___________?
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A. remains the same

B. increases

C. decreases

D. none of the above

5. The collector-base junction in a transistor has___________?
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A. forward bias at all times

B. none of the above

C. reverse bias at all times

D. low resistance

6. The phase difference between the input and output voltages of a transistor connected in common collector arrangement is_____________?
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A. 00

B. 1800

C. 900

D. 2700

7. The input impedance of a transistor connected in___________arrangement is the highest?
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A. common emitter

B. common base

C. common collector

D. none of the above

8. The emitter of a transistor is___________doped?
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A. moderately

B. heavily

C. none of the above

D. lightly

9. In a pnp transistor, the current carriers are______________?
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A. holes

B. free electrons

C. acceptor ions

D. donor ions

10. In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of is____________?
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A. 50

B. 200

C. 100

D. about 1

11. IC = [a / (1 a )] IB +_____________?
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A. ICEO

B. (1 a ) IB

C. ICBO

D. IC

12. The collector of a transistor is____________doped?
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A. heavily

B. lightly

C. moderately

D. none of the above

13. In a transistor, signal is transferred from a___________circuit?
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A. high resistance to low resistance

B. low resistance to high resistance

C. high resistance to high resistance

D. low resistance to low resistance

14. The leakage current in CE arrangement is____________that in CB arrangement?
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A. less than

B. none of the above

C. the same as

D. more than
15. A heat sink is generally used with a transistor to______________?
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A. compensate for excessive doping

B. decrease the forward current

C. prevent excessive temperature rise

D. increase the forward current

16. The output impedance of a transistor is____________?
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A. low

B. high

C. zero

D. very low

17. The power gain in a transistor connected in___________arrangement is the highest?
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A. common collector

B. common base

C. common emitter

D. none of the above

18. The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is___________?
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A. 180o

B. 0o

C. 90o

D. 270o

19. The voltage gain in a transistor connected in___________arrangement is the highest?
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A. common base

B. common emitter

C. common collector

D. none of the above

20. A transistor is connected in CB mode. If it is not connected in CE mode with same bias voltages, the values of IE, IB and IC will____________?
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A. remain the same

B. decrease

C. none of the above

D. increase

21. The phase difference between the input and output voltages in a common base arrangement is___________?
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A. 90o

B. 180o

C. 0o

D. 270o

22. The output impedance of a transistor connected in_____________arrangement is the highest?
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A. common collector

B. common base

C. common emitter

D. none of the above

23. The value of a of a transistor is_____________?
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A. 1

B. less than 1

C. more than 1

D. none of the above

24. If the value of a is 0.9, then value of is___________?
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A. 9

B. 900

C. 0.9

D. 90
25. The input impedance of a transistor is___________?
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A. low

B. very high

C. almost zero

D. high

26. In a transistor, the base current is about_________of emitter current?
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A. 25%

B. 35%

C. 5%

D. 20%

27. IC = [a / (1 a )] IB + [___________ / (1 a )?
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A. IE

B. ICBO

C. ICEO

D. IC

28. In a transistor if = 100 and collector current is 10 mA, then IE is___________?
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A. 100 mA

B. 110 mA

C. none of the above

D. 100.1 mA
29. The arrow in the symbol of a transistor indicates the direction of____________?
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A. hole current in the emitter

B. electron current in the collector

C. electron current in the emitter

D. donor ion current

30. In a transistor ______________?
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A. IE = IC + IB

B. IB = IC + IE

C. IC = IE + IB

D. IE = IC IB

31. IC = aIE +____________?
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A. IB

B. ICBO

C. ICEO

D. IB

32. The most commonly used transistor arrangement is____________arrangement?
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A. none of the above

B. common emitter

C. common collector

D. common base

33. The relation between and a is______________?
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A. = (1 a ) / a

B. = a / (1 a )

C. = a / (1 + a )

D. = 1 / (1 a )

34. Most of the majority carriers from the emitter____________?
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A. recombine in the base

B. none of the above

C. recombine in the emitter

D. pass through the base region to the collector
35. The base of a transistor is____________doped?
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A. heavily

B. moderately

C. lightly

D. none of the above

36. A transistor has____________?
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A. two pn junctions

B. four pn junctions

C. one pn junction

D. three pn junctions

37. A transistor is a___________operated device?
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A. current

B. voltage

C. both voltage and current

D. none of the above

38. BC 147 transistor indicates that it is made of____________?
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A. carbon

B. silicon

C. none of the above

D. germanium

39. The value of for a transistor is generally____________?
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A. 1

B. above 500

C. between 20 and 500

D. less than 1

40. IC = IB +__________?
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A. ICBO

B. ICEO

C. IC

D. aIE

41. The most commonly used semiconductor in the manufacture of a transistor is_____________?
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A. germanium

B. silicon

C. none of the above

D. carbon

42. At the base-emitter junctions of a transistor, one finds___________?
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A. a wide depletion layer

B. low resistance

C. none of the above

D. a reverse bias