electrical engineering MCQs – Page 192

Practise multiple-choice questions from electrical engineering for competitive examinations and subject revision. Review each marked answer and report any item that may be outdated or unclear.

electrical engineering Mcqs
3821. A change in the value of the emitter resistance Re in a differential amplifier?
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A. affects the difference mode gain Ad

B. affects the common mode gain Ac

C. ffects both Ad and Ac

D. does not effect either Ad and Ac

3822. The action of JFET in its equivalent circuit can best be represented as a_____________?
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A. voltage controlled current source

B. Current controlled voltage source

C. Current controlled Current source

D. Voltage controlled voltage source

3823. Most of the linear ICs are based on the two-transistor differential amplifier because of its___________?
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A. high input resistance

B. high voltage gain

C. high CMRR

D. input voltage dependent linear transfer characteristic

3824. The early effect in a bipolar junction transistor is caused by_______________?
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A. fast turn-off

B. large emitter-base forward bias

C. large collector-base reverse bias

D. fast turn-on

3825. The current gain of a BJT is__________?
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A. gm r?

B. gm /r?

C. gm r0

D. gm / r0

3828. In a common emitter, unbypassed resister provides___________?
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A. voltage shunt feedback

B. current series feedback

C. positive current feedback

D. negative voltage feedback
3829. In all base driver amplifiers__________?
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A. ac collector voltage is 180 out of phase with ac base voltage

B. none of the above

C. ac emitter voltage is 180 out of phase with ac base voltage

D. ac collector voltage is in phase with ac base voltage

3833. Generally, the gain of a transistor amplifier falls at high frequencies due to the___________?
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A. Coupling capacitor at the input

B. Skin effect

C. Coupling capacitor at the output

D. Internal Capacitance of the device
3834. Class AB operation is often used in power large signal amplifiers in order to_________?
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A. remove even harmonics

B. get maximum efficiency

C. overcome a crossover distortion

D. reducing collector dissipation

3835. An npn BJT has gm=38mA/v, c =1014 F, c? =1013F and DC current gain ?0=90.For this transistor fT & f? are________?
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A. fT =1.47 x 1010 Hz & f? = 1.33 x 1012 Hz

B. fT =1.64 x 108 Hz & f? = 1.47 x 1010 Hz.

C. fT =1.33 x 1012 Hz & f? = 1.47 x 1010 Hz

D. fT =1.47 x 1010 Hz & f? = 1.64 x 108 Hz
3836. The bandwidth of an RF tuned amplifier is dependent on____________?
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A. Quiescent operating point

B. Q factor of the tuned i/p circuit

C. Q factor of the tuned o/p circuit

D. Q-factor of the o/p and i/p circuits as well as quiescent operating point

3837. The horizontal intercept of dc load line is the same as ideal____________?
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A. saturation point

B. quasi saturation point

C. operating point

D. cut off point
3838. MOSFET can be used as a__________?
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A. voltage controlled capacitor

B. voltage controlled inductors

C. current controlled capacitor

D. current controlled inductor