electrical engineering MCQs – Page 118

Practise multiple-choice questions from electrical engineering for competitive examinations and subject revision. Review each marked answer and report any item that may be outdated or unclear.

electrical engineering Mcqs
2341. Which of the following will happen if the thickness of refractory wall of furnace is increased ?
comments icon0

A. Heat loss through furnace wall will increase

B. Energy consumption will increase

C. Temperature inside the furnace will fall

D. Temperature on the outer surface of furnace walls will drop
2342. Mains a.c. power is converrted into d.c. power for_________________?
comments icon0

A. none of the above

B. lighting purposes

C. using in electronic equipment

D. heaters

2343. The disadvantage of a half-wave rectifier is that the__________________?
comments icon0

A. none of the above

B. output is difficult to filter

C. components are expensive

D. diodes must have a higher power rating

2345. If the doping level of a crystal diode is increased, the breakdown voltage__________________?
comments icon0
A. is decreased

B. none of the above

C. remains the same

D. is increased

2346. Properly of low temperature co-eflficient of heating element is desired due to which of the following reasons ?
comments icon0

A. To avoid initial rush of current

B. To avoid change in kW rating with temperature

C. Both (A) and (B)

D. Either (A) or (B)

2348. Most of the majority carriers from the emitter____________?
comments icon0

A. recombine in the emitter

B. recombine in the base

C. pass through the base region to the collector

D. none of the above

2352. As the temperature of a transistor goes up, the base-emitter resistance___________?
comments icon0

A. increases

B. none of the above

C. remains the same

D. decreases
2354. IC = IB +__________?
comments icon0
A. ICEO

B. IC

C. ICBO

D. aIE

2355. A zener diode has ______________ breakdown voltage?
comments icon0

A. undefined

B. none of the above

C. zero

D. sharp
2356. Factors on which soil resistance depends_______________?
comments icon0
A. all the above

B. moisture

C. Nacl

D. depth of the electrode

2358. Resistance variation method of temperature control is done by connecting resistance elements in_____________?
comments icon0

A. series-parallel connections

B. star-delta connections

C. parallel

D. all of the above ways

E. series

2359. The leakage current in CE arrangement is____________that in CB arrangement?
comments icon0

A. none of the above

B. more than

C. the same as

D. less than

2360. Thermal runaway is not possible in FET because as the temperature of FET increases_________________?
comments icon0

A. none of the above

B. the transconductance increases

C. the drain current increases

D. the mobility decreases